|
气氛
Atmosphere
|
炉温（℃）
Furnace
|
表面负荷
（W/cm2）
Surface Load
|
对元件的影响
Effect On Elements
|
解决办法
Solution
|
|
氨
|
1290
|
3.8
|
与sic作用生成甲烷减少sio2保护膜 Decreasing SiO2 protective film by Acting with SiC to generate Methane
|
露点激活
Make it active at dew point
|
|
CO₂
|
1450
|
3.1
|
腐蚀碳化硅 Attacking sic
|
用石英管保护
Protecting by quartz tube
|
|
18%CO
|
1500
|
4.0
|
无影响 No
|
|
|
20%CO
|
130
|
3.8
|
吸附碳粒影响sio2保护膜 Affecting SiO2 protective film by Adsorbing C grains
|
|
|
卤素
|
704
|
3.8
|
腐蚀碳化硅减少sio2保护膜 Decreasing SiO2 protective film by eroding SiC
|
用石英管保护
Protecting by quartz tube
|
|
碳氢化合物
|
1310
|
3.1
|
吸附碳粒致热污染，分解的碳沉积，易造成电气故障 Causing hot pollution by adsorbing C grains
|
送进充分的空气
Filling with plenty of air
|
|
氢
|
1290
|
3.1
|
与sic作用反应生成甲烷，减少sic2保护膜 Decreasing SiO2 protective film by Acting with SiC to generate Methane
|
露点激活
Make it Active at dew point
|
|
甲烷
|
1370
|
3.1
|
吸附碳粒致热污染 Causing hot pollution by adsorbing C grains
|
|
|
N
|
1370
|
3.1
|
与sic反应形成氮化硅绝缘 Generating SiN insulating layer by acting with SiC
|
|
|
Na
|
1310
|
3.8
|
侵蚀碳化硅 Eroding sic
|
用石英管保护
Protecting by quartz tube
|
|
SO2
|
1310
|
3.8
|
侵蚀碳化硅 Eroding sic
|
用石英管保护
Protecting by quartz tube
|
|
真空
|
1204
|
3.8
|
|
|
|
氧
|
1310
|
3.8
|
碳化硅被氧化 Sic oxidized
|
|
|
水（不同含量）
|
1090-1370
|
3.1-3.6
|
与sic作用生成硅的水化物
Generating hydrate of silicon by acting on SiC
|
|
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